1.48 MV.cm-1/0.2 mΩ.cm2 GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

被引：30
作者：
Bian, Zhaoke [1 ]
Zhang, Jincheng [1 ]
Zhao, Shenglei [1 ]
Zhang, Yachao [1 ]
Duan, Xiaoling [1 ]
Chen, Jiabo [1 ]
Ning, Jing [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 10期
关键词：
Gallium nitride; Schottky diode; oxygen plasma termination; high electric field; low on-resistance; LEAKAGE;
D O I：
10.1109/LED.2020.3017510
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a high-performance GaN quasi-vertical Schottky barrier diode (SBD) is demonstrated via oxygen plasma termination. A specific on-resistance of 0.2 m Omega.cm(2), turn-on voltage of 0.71 V, and breakdown voltage of 193 V are achieved with a GaN SBD of 1.3 mu m drift layer. The average breakdown electric field is calculated to be about 1.48MV/cm, which ismuch higher than the state-of-art value for GaN vertical SBDs. The temperature-dependent forward and reverse I-V characteristics confirm the high-temperature stability of the oxygen plasma treated SBDs. X-ray spectroscopy and Kelvin Probe Force Microscopy reveal that the surface potential is increased after the oxygen plasma treatment, which results in the suppression of the leakage current and improvement of the breakdown electric field.
引用
收藏
页码：1476 / 1479
页数：4
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