Li-doped NiMgO thin films as a promising p-type transparent conductive material with wide band-gap

被引：10

作者：

Cao, Ling ^{[1
,2
,3
]}

Li, Xuyan ^{[1
,2
]}

Wang, Dongxiao ^{[2
]}

Zhu, Liping ^{[3
]}

机构：

[1] Taiyuan Univ Technol, Key Lab Adv Transducers & Intelligent Control Sys, Minist Educ, Taiyuan 030024, Peoples R China

[2] Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China

[3] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 110卷

关键词：

Thin films; Semiconductors; Electrical properties; Optical materials; Transparent conductive oxides; OXIDE;

D O I：

10.1016/j.matlet.2013.07.128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conductive p-type Li-doped NiMgO thin films were prepared on quartz substrates by pulsed laser deposition. The effects of oxygen pressure on the properties of the films were investigated. The results demonstrated that the Mg-alloying enhances the transparency of the films and Li-doping improves the conductivity. A minimum resistivity of 19.26 Omega cm, with an average optical transmittance higher than 85% in the visible region and a wide band-gap of 3.87 eV, was obtained for the film prepared at the oxygen pressure of 5 Pa. The p-type conduction of Li-doped NiMgO film was further confirmed by a rectifying Li-doped NiMgO/i-ZnO/Al-doped ZnMgO heterojunction. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：73 / 75

页数：3

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