Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation of SiC

被引：90

作者：

Di Ventra, M ^{[1
]}

Pantelides, ST ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.83.1624

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report first-principles calculations in terms of which we describe the atomic-scale mechanisms of the nucleation and growth of SiO2 precipitates in cubic SiC. A three-oxygen cluster is found to be analogous to the well-known "thermal donor" in Si. Emission of a CO molecule converts it into an SiO2-like precipitate that can grow further. We propose that similar processes can account for the observed CO emission during SiC oxidation and the trapping of C atoms at the SiC-SiO2 interface.

引用

页码：1624 / 1627

页数：4

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