Numerical Study on Thermal Boundary Resistance and Conductive Properties of Cu/Al Interface

被引:1
|
作者
Ling, Zhi-Yong [1 ]
Qian, Long [1 ]
Cheng, Guang-Gui [1 ]
Zhang, Zhong-Qiang [1 ]
Sun, Dong-Jian [1 ]
机构
[1] Jiangsu Univ, Ctr Micro Nano Sci & Technol, Zhenjiang 212013, Peoples R China
来源
MICRO-NANO TECHNOLOGY XIV, PTS 1-4 | 2013年 / 562-565卷
关键词
Cu/Al interface; thermal boundary resistance; conductive properties; copper component;
D O I
10.4028/www.scientific.net/KEM.562-565.1190
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, the thermal boundary resistance and conductive properties of Cu/Al interface are investigated by using first-principles calculations based on density functional theory (DFT) with considering the pressure influence. Based on the atomic model of Cu/Al interface the simulation results show that the lattice parameters for both Cu and Al are sensitive to pressure and density states of Cu/Al interface increase as pressure increases from 0 to 5 GPa. Although Cu and Al have the same atomic structure, the significant differences of the density of phonon states lead to the thermal resistance that exists at the Cu/Al interface. At the Cu/Al interface, Cu and Al atoms can diffuse into each other and form an alloy-like interfacial region. The change of the copper component in the alloy can considerably affect the conductive properties of Cu/Al interface.
引用
收藏
页码:1190 / 1195
页数:6
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