Compensation effect on the CW spin-polarization degree of Mn-based structures

被引：4

作者：

Balanta, M. A. G. ^{[1
]}

Brasil, M. J. S. P. ^{[1
]}

Iikawa, F. ^{[1
]}

Mendes, U. C. ^{[1
]}

Brum, J. A. ^{[1
]}

Maialle, M. Z. ^{[2
]}

Danilov, Yu A. ^{[3
]}

Vikhrova, O. V. ^{[3
]}

Zvonkov, B. N. ^{[3
]}

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

[2] Univ Estadual Campinas, Fac Ciencias Aplicadas, BR-1344350 Limeira, SP, Brazil

[3] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod, Russia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 21期

基金：

巴西圣保罗研究基金会;

关键词：

SEMICONDUCTORS; RELAXATION; ELECTRONS;

D O I：

10.1088/0022-3727/46/21/215103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time.

引用

页数：6

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