Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

被引：219
作者：
Kim, JK [1 ]
Kim, SS
Kim, WJ
Bhalla, AS
Guo, R
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea
[2] Penn State Univ, Mat Res Lab 187, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1063/1.2189453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiferroic Cr-doped BiFeO3 (BFO) thin films were prepared on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition method. From the x-ray photoelectron spectroscopy measurements, it was observed that the valence number of Fe ion in undoped and Cr-doped BFO thin films was found to be almost 3+. It was found that Cr-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage-current density and P-E hysteresis characteristics. The 3 mol % Cr-doped BFO thin film showed a leakage-current density of 9.2x10(-7) A/cm(2) at 100 kV/cm and a large remanent polarization (P-r) of 61 mu C/cm(2) at room temperature. (c) 2006 American Institute of Physics.
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