CdTe thin film growth model under CSS conditions

被引：23

作者：

Cruz-Campa, Jose Luis ^{[1
]}

Zubia, David ^{[1
]}

机构：

[1] Univ Texas El Paso, Nano Mat Integrat Lab, Dept Elect & Comp Engn, El Paso, TX 79968 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 01期

基金：

美国国家科学基金会;

关键词：

Close-spaced sublimation (CSS); Modeling; CdTe solar cells; Mass transport; SUBLIMATION; HGCDTE;

D O I：

10.1016/j.solmat.2008.02.012

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A deposition rate model for CdTe via close-spaced sublimation spanning the sublimation and diffusion-limited cases is presented. The approach consists of applying governing equations for each of the two limiting cases and selecting the minimum rate. The model is validated by comparing it to two experimental datasets and adjusting two fitting parameters so that a good quantitative fit is obtained. A good quantitative fit was obtained using the fitting parameter values of alpha = 0.36 and beta = 0.035 for all the datasets, spanning the sublimation and diffusion-limited cases. This gives confidence that the model is accurate and indicates that the fitting parameters represent physical phenomena. The model was validated within the temperature range from 400 to 600 degrees C, pressures from 10(-2) to 760 Torr, and substrate source distances from 0.87 to 1 mm but could have greater range of applicability. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：15 / 18

页数：4

共 19 条

[1] The growth of CdTe thin film by close space sublimation system [J].

Alamri, SN .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (02) :352-360

[2] GROWTH OF CDTE-FILMS BY CLOSE-SPACED VAPOR TRANSPORT [J].

ANTHONY, TC ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1296-1302

[3] Defect characterization for epitaxial HgCdTe alloys by electron microscopy [J].

Aoki, T ;

Chang, Y ;

Badano, G ;

Zhao, J ;

Grein, C ;

Sivananthan, S ;

Smith, DJ .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) :224-234

[4] PARTIAL PRESSURES + GIBBS FREE ENERGY OF FORMATION FOR CONGRUENTLY SUBLIMING CDTE(C) [J].

BREBRICK, RF ;

STRAUSS, AJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1441-&

[5]

Chapman S., 1970, MATH THEORY NONUNIFO

[6] Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources [J].

de Melo, O ;

Sánchez, E ;

Rodríguez, H ;

De Roux, S ;

Rábago-Bernal, F ;

Ruiz-García, J .

MATERIALS CHEMISTRY AND PHYSICS, 1999, 59 (02) :120-124

[7] DEPENDENCE OF THE VACUUM SUBLIMATION RATE OF CDTE UPON CRYSTALLOGRAPHIC ORIENTATION [J].

DUBOWSKI, JJ ;

WROBEL, JM ;

WILLIAMS, DF .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :660-662

[8] Emissions and encapsulation of cadmium in CdTePV modules during fires [J].

Fthenakis, VM ;

Fuhrmann, M ;

Heiser, J ;

Lanzirotti, A ;

Fitts, J ;

Wang, W .

PROGRESS IN PHOTOVOLTAICS, 2005, 13 (08) :713-723

[9]

Glang R., 1970, HDB THIN FILM TECHNO

[10] HgCdTe on Si: Present status and novel buffer layer concepts [J].

Golding, TD ;

Holland, OW ;

Kim, MJ ;

Dinan, JH ;

Almeida, LA ;

Arias, JM ;

Bajaj, J ;

Shih, HD ;

Kirk, WP .

JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (08) :882-889

← 1 2 →