Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

被引:28
作者
Ma, Ligang [1 ,2 ]
Liu, Wenchao [1 ]
Cai, Hongling [1 ]
Zhang, Fengming [1 ]
Wu, Xiaoshan [1 ]
机构
[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstructures, Sch Phys,Natl Lab Solid State Microstructures, Jiangsu Key Lab Nano Technol, Nanjing 210093, Peoples R China
[2] Nanjing Xiaozhuang Univ, Sch Elect Engn, Nanjing 211171, Peoples R China
来源
SCIENTIFIC REPORTS | 2016年 / 6卷
关键词
THIN-FILMS; NANOSTRUCTURES; SPECTROSCOPY; EVAPORATION;
D O I
10.1038/srep38858
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing single-crystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H2S/N-2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion.
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页数:9
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