In this experimental work, the effects of multiwall carbon nanotubes (MWCNTs) on electrical characteristics of zinc oxide-MWCNT-high-density polyethylene composite varistors have been investigated. All the samples were made at the temperature of 130 degrees C and pressure of 60 MPa by the hot-press method. Results show that increasing zinc oxide content in the mixture increases breakdown voltage up to 170 V, where the highest nonlinear coefficient (alpha similar to 13) corresponds to the samples with 95 wt% of ZnO. Results with regard to the effects of MWCNT as an additive reveal that increasing its content from 1 to 2.5% in the composites, the breakdown voltage decreases to 50 V, but the highest nonlinear coefficient (similar to 14) corresponds to the sample with 1.5% of MWCNT content. It is also revealed that, heat treatment of the sample at a constant temperature of 135 degrees C and different time intervals from 2 to 10 h, the sample with 6 h annealing time shows maximum breakdown voltages (V-b = 140 V) with the highest nonlinear coefficient (similar to 14). Investigation of the potential barrier height of samples shows a complete consistency with the breakdown voltage variations. The results have been justified regarding XRD patterns and SEM micrographs of samples.
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Tian, Tian
Cheng, Lihong
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Cheng, Lihong
Xing, Juanjuan
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Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Xing, Juanjuan
Zheng, Liaoying
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Zheng, Liaoying
Man, Zhenyong
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Man, Zhenyong
Hu, Dongli
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Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Hu, Dongli
Bernik, Slavko
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Jozef Stefan Inst, Dept Nanostruct Mat, SI-1000 Ljubljana, SloveniaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Bernik, Slavko
Zeng, Jiangtao
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Zeng, Jiangtao
Yang, Jia
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China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Yang, Jia
Liu, Yi
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China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Liu, Yi
Li, Guorong
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Tambe, Pankaj B.
Bhattacharyya, Arup R.
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Bhattacharyya, Arup R.
Kulkarni, Ajit R.
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India