Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation

被引：9
|
作者：
Bae, Heesun [1 ]
Im, Seongil [2 ]
Song, Jonghan [3 ]
机构：
[1] Univ Seoul, Dept Phys, Fac Liberal Art & Teacher Educ, Seoul 130743, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[3] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 07期
关键词：
ZnO; isolation technology; ion implantation; thin-film transistors; photodetectors;
D O I：
10.1143/JJAP.47.5362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm(2)/(V.s) and on/off current ratio of similar to 10(4). Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100M Omega resistor, a minimum response time of similar to 5 ms under 364nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.
引用
收藏
页码：5362 / 5364
页数：3
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