Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation

被引：9

作者：

Bae, Heesun ^{[1
]}

Im, Seongil ^{[2
]}

Song, Jonghan ^{[3
]}

机构：

[1] Univ Seoul, Dept Phys, Fac Liberal Art & Teacher Educ, Seoul 130743, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[3] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 07期

关键词：

ZnO; isolation technology; ion implantation; thin-film transistors; photodetectors;

D O I：

10.1143/JJAP.47.5362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm(2)/(V.s) and on/off current ratio of similar to 10(4). Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100M Omega resistor, a minimum response time of similar to 5 ms under 364nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

引用

页码：5362 / 5364

页数：3

共 14 条

[1]

Ahmed S, 2001, EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, P43, DOI 10.1109/EDMO.2001.974281

[2] SiC device edge termination using finite area argon implantation [J].

Alok, D ;

Baliga, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) :1013-1017

[3] Photodetecting properties of ZnO-based thin-film transistors [J].

Bae, HS ;

Yoon, MH ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315

[4]

Carcia PF, 2003, MATER RES SOC SYMP P, V769, P233

[5] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[6] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[7] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[8] Electrical isolation of ZnO by ion bombardment [J].

Kucheyev, SO ;

Deenapanray, PNK ;

Jagadish, C ;

Williams, JS ;

Yano, M ;

Koike, K ;

Sasa, S ;

Inoue, M ;

Ogata, K .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3350-3352

[9] High mobility thin film transistors with transparent ZnO channels [J].

Nishii, J ;

Hossain, FM ;

Takagi, S ;

Aita, T ;

Saikusa, K ;

Ohmaki, Y ;

Ohkubo, I ;

Kishimoto, S ;

Ohtomo, A ;

Fukumura, T ;

Matsukura, F ;

Ohno, Y ;

Koinuma, H ;

Ohno, H ;

Kawasaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4A) :L347-L349

[10] n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation [J].

Park, CH ;

Jeong, IS ;

Bae, HS ;

Kim, TG ;

Im, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 :127-130

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