Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

被引：6

作者：

Liu, Zhi ^{[1
]}

Cheng, Buwen ^{[1
]}

Hu, Weixuan ^{[1
]}

Su, Shaojian ^{[1
]}

Li, Chuanbo ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Ge quantum dots; Photoluminescence; Ostwald ripening; Overgrowth temperature; MU-M; ELECTROLUMINESCENCE; EVOLUTION; CLUSTERS; SI;

D O I：

10.1186/1556-276X-7-383

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 A degrees C, while Si spacers were grown at various temperatures (520 A degrees C, 550 A degrees C, and 580 A degrees C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

引用

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