Engineering of Chern insulators and circuits of topological edge states

被引：10

作者：

Minarelli, Emma L. ^{[1
,2
,3
]}

Poyhonen, Kim ^{[4
]}

van Dalum, Gerwin A. R. ^{[2
,3
]}

Ojanen, Teemu ^{[4
,5
]}

Fritz, Lars ^{[2
,3
]}

机构：

[1] Univ Coll Dublin, Sch Phys, Dublin 4, Ireland

[2] Univ Utrecht, Inst Theoret Phys, Leuvenlaan 4, NL-3584 CE Utrecht, Netherlands

[3] Univ Utrecht, Ctr Extreme Matter & Emergent Phenomena, Leuvenlaan 4, NL-3584 CE Utrecht, Netherlands

[4] Aalto Univ, Dept Appl Phys, POB 15100, FI-00076 Aalto, Finland

[5] Tampere Univ Technol, Lab Phys, FI-33101 Tampere, Finland

来源：

PHYSICAL REVIEW B | 2019年 / 99卷 / 16期

关键词：

REALIZATION;

D O I：

10.1103/PhysRevB.99.165413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route toward engineering electronic topological states of matter. In this paper we show how to realize tuneable Chern insulators starting from a three-dimensional topological insulator whose surface is gapped and intentionally doped with magnetic impurities. The main advantage of the protocol is that it is robust and in particular not very sensitive to the impurity configuration. We explicitly demonstrate this for a square lattice of impurities as well as a random lattice. In both cases we show that it is possible to change the Chern number of the system by one through manipulating its topological state. We also discuss how this can be used to engineer circuits of edge channels.

引用

页数：8