The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

被引:16
|
作者
Zhang, Tao [1 ,2 ]
Shen, Yixian [1 ,2 ]
Feng, Qian [1 ,2 ]
Tian, Xusheng [1 ,2 ]
Cai, Yuncong [1 ,2 ]
Hu, Zhuangzhuang [1 ,2 ]
Yan, Guangshuo [1 ,2 ]
Feng, Zhaoqing [1 ,2 ]
Zhang, Yachao [1 ,2 ]
Ning, Jing [1 ,2 ]
Xu, Yongkuan [3 ]
Lian, Xiaozheng [3 ]
Sun, Xiaojuan [4 ]
Zhang, Chunfu [1 ,2 ]
Zhou, Hong [1 ,2 ]
Zhang, Jincheng [1 ,2 ]
Hao, Yue [1 ,2 ]
机构
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Microelect, Shaanxi Joint Key Lab Graphene, Xian 710071, Peoples R China
[3] China Elect Technol Grp Corp, 46 Res Inst, Tianjin 300220, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Ope, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2020年 / 15卷 / 01期
基金
中国国家自然科学基金;
关键词
beta-Ga2O3; PEDOT:PSS; Hybrid Schottky diodes; Photodetector; SOLAR-BLIND PHOTODETECTORS; BETA-GA2O3; THIN-FILMS; FABRICATION; PERFORMANCE; JUNCTION;
D O I
10.1186/s11671-020-03397-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, the hybrid beta-Ga(2)O(3)Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height phi(b)increases, and the ideality factorndecreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and beta-Ga(2)O(3)interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio ofR(254 nm)/R(400 nm)up to 1.26 x 10(3)are obtained, suggesting that the hybrid PEDOT:PSS/beta-Ga(2)O(3)Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.
引用
收藏
页数:8
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