Accumulation of stable optical centres in silica glasses under pulse beam irradiation

被引:13
作者
Gritsyna, VT
Bazilevskaya, TA
Voitsenya, VS
Orlinski, DV
Tarabrin, YA
机构
[1] KHARKOV AM GORKII STATE UNIV, UA-310077 KHARKOV, UKRAINE
[2] KHARKOV PHYS & TECHNOL INST, UA-310108 KHARKOV, UKRAINE
[3] IV KURCHATOV ATOM ENERGY INST, RSC, MOSCOW 123182, RUSSIA
关键词
D O I
10.1016/S0022-3115(96)00187-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stable optical centres production under 10 MeV electron irradiation were investigated in three types of commercial silica glasses with different concentrations of the OH-group in the range 10(-2)-10(-4)%. The dependencies of absorption coefficient at wavelength 215 nm (alpha(215)) on absorbed dose show the saturation at doses greater than or equal to 2 MGy for glasses with high concentrations of the OH-group. At a fixed dose of 0.56 MGy measurements of alpha(215) dependencies at temperature 310 K on electron pulse repetition rate (f) gives a substantial increase of efficiency of defects production at high value of f, that indicates the existence of transition effects in the time interval (Delta tau) between electron pulses with a life time in ms range. Measured dependencies alpha(215) = f(Delta tau) at temperatures 520 and 620 K show the intensification of radiation annealing process, that leads to very low efficiency of stable defect production at high electron pulse repetition rate.
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页码:1310 / 1317
页数:8
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