Influence of N-doping on the structural and photoluminescence properties of graphene oxide films

被引:89
|
作者
Tran Van Khai [1 ]
Na, Han Gil [1 ]
Kwak, Dong Sub [1 ]
Kwon, Yong Jung [1 ]
Ham, Heon [2 ]
Shim, Kwang Bo [1 ]
Kim, Hyoun Woo [1 ]
机构
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[2] Chungju Natl Univ, H&H Co Ltd, Chungju Si 330702, Chungbuk, South Korea
基金
新加坡国家研究基金会;
关键词
NITROGEN-DOPED GRAPHENE; CARBON NANOTUBES; PHYSICAL-PROPERTIES; GRAPHITE OXIDE; REDUCTION; GROWTH; DISPERSIONS; DEPOSITION;
D O I
10.1016/j.carbon.2012.04.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3799 / 3806
页数:8
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