Influence of N-doping on the structural and photoluminescence properties of graphene oxide films

被引：89

作者：

Tran Van Khai ^{[1
]}

Na, Han Gil ^{[1
]}

Kwak, Dong Sub ^{[1
]}

Kwon, Yong Jung ^{[1
]}

Ham, Heon ^{[2
]}

Shim, Kwang Bo ^{[1
]}

Kim, Hyoun Woo ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[2] Chungju Natl Univ, H&H Co Ltd, Chungju Si 330702, Chungbuk, South Korea

来源：

CARBON | 2012年 / 50卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

NITROGEN-DOPED GRAPHENE; CARBON NANOTUBES; PHYSICAL-PROPERTIES; GRAPHITE OXIDE; REDUCTION; GROWTH; DISPERSIONS; DEPOSITION;

D O I：

10.1016/j.carbon.2012.04.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3799 / 3806

页数：8

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