Cadmium telluride thin films: growth from solution and characteristics

被引:13
|
作者
Patil, VB [1 ]
Sutrave, DS [1 ]
Shahane, GS [1 ]
Deshmukh, LP [1 ]
机构
[1] Shivaji Univ, Ctr PG Studies, Dept Phys Appl Elect, Thin Film & Solar Studies Res Lab, Solapur 413003, MS, India
关键词
cadmium telluride; chemical growth process; n-type conduction; hexagonal and cubic phase structures;
D O I
10.1016/S0040-6090(01)01480-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An extremely simple and cheap method for the deposition of cadmium telluride thin films is presented. Good quality deposits were obtained on ground glass at 75 degreesC, pH 10 +/-0.3 with a deposition time of 90 min. Light grey-coloured and uniform CdTe layers, approximately 0.3 mum thick, were obtained with this process under the above deposition conditions. Compositional analysis showed CdTe films to be Cd-rich. The as-deposited layers are crystalline with a mixture of hexagonal and cubic phase structures. Microscopic observations showed some overgrowth on the spherical-type crystallites grown. Baking increases the coarseness of the material compared to the as-deposited film. Optical studies revealed a high absorption coefficient (10(4) cm(-1)) with a direct type of transition. The band-ap is estimated as 1.45 eV. The films show n-type conduction. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:35 / 38
页数:4
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