Oxide materials;
Thin films;
Liquid-solid reactions;
Electrochemical reactions;
Atomic force microscopy;
Photoelectron spectroscopies;
ITO FILMS;
PHOTOELECTRON-SPECTROSCOPY;
TRANSPARENT;
IMPROVEMENT;
PERFORMANCE;
SOLVENT;
D O I:
10.1016/j.jallcom.2012.09.147
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid. (C) 2012 Elsevier B.V. All rights reserved.
机构:
Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Ensch, Mary
Wehring, Bettina
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机构:
Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Wehring, Bettina
Landis, Greg D.
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h-index: 0
机构:
Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Landis, Greg D.
Garratt, Elias
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机构:
Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Garratt, Elias
Becker, Michael F.
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Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Becker, Michael F.
Schuelke, Thomas
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机构:
Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
Schuelke, Thomas
Rusinek, Cory A.
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Fraunhofer USA Inc, Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USAMichigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
机构:
Sunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South KoreaSunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South Korea
Kim, Jun Young
Kim, Jae-Kwan
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Sunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South KoreaSunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South Korea
Kim, Jae-Kwan
Kim, Ja-Yeon
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机构:
Korea Photon Technol Inst, LED team, Kwangju 500460, South KoreaSunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South Korea
Kim, Ja-Yeon
Kwon, Min-Ki
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h-index: 0
机构:
Chosun Univ, Dept Photon Engn, Kwangju 501759, South KoreaSunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540950, Chonnam, South Korea
机构:
Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
Xiao, Juncheng
Zeng, Guang
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机构:
Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
TCL China Star Optoelect Semicond Display Technol, Shenzhen, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
Zeng, Guang
Li, Ji
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机构:
TCL China Star Optoelect Semicond Display Technol, Shenzhen, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
Li, Ji
Zhang, Shengdong
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机构:
Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
Peking Univ, Shenzhen Grad Sch, Shenzhen 518000, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China
机构:
Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Qiu, Z.
An, T.
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机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
An, T.
Uchida, K.
论文数: 0引用数: 0
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机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Uchida, K.
Hou, D.
论文数: 0引用数: 0
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机构:
Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Hou, D.
Shiomi, Y.
论文数: 0引用数: 0
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机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Shiomi, Y.
Fujikawa, Y.
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机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Fujikawa, Y.
Saitoh, E.
论文数: 0引用数: 0
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机构:
Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, JapanTohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan