Deposition of titanium oxide and titanium carbide containing thin carbon films in a plasma activated process

The deposition of Ti containing a-C:H (amorphous hydrogenated carbon) films was achieved using a single source metal organic (MO) precursor (titanium oxide) in a plasma activated process. To obtain a constant flow of the MO precursor, it was necessary to employ H-2 as a carrier gas. The films were deposited onto Si substrates mounted onto the r.f. powered cathode. The film composition was determined using X-ray induced photoelectron spectroscopy ( XPS). The Ti content was in the range 17-25 at%; it strongly depends on the self-bias potential as well as on the H-2 flow. For high H-2 flows and high (negative) bias potential, besides incorporated TiO2, a second Ti binding state was detected due to the formation of Ti-C bonds. (C) 1999 Published by Elsevier Science S.A. All rights reserved.