A General Solvent Selection Strategy for Solution Processed Quantum Dots Targeting High Performance Light-Emitting Diode

被引:106
作者
Zou, Yatao [1 ,2 ]
Ban, Muyang [1 ,2 ]
Cui, Wei [1 ,2 ]
Huang, Qi [1 ,2 ]
Wu, Chen [1 ,2 ]
Liu, Jiawei [1 ,2 ]
Wu, Haihua [1 ,2 ]
Song, Tao [1 ,2 ]
Sun, Baoquan [1 ,2 ]
机构
[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, 199 Renai Rd, Suzhou 215123, Peoples R China
[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, 199 Renai Rd, Suzhou 215123, Peoples R China
基金
中国国家自然科学基金;
关键词
HIGH-EFFICIENCY; SEMICONDUCTING POLYMER; NANOCRYSTALS; DEVICES; ELECTROLUMINESCENCE; MULTILAYER; MONOLAYERS; INJECTION; DISPLAYS; QLEDS;
D O I
10.1002/adfm.201603325
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An all-solution-processed quantum dots (QDs) light emitting diode (QLED) consists of different layers deposited from various orthogonal solvents. Here, the authors develop a general solvent selection strategy to obtain orthogonal solubility properties as well as high film quality. It is found that a "poor" QDs film morphology with striation defects often occurs when the QDs film is deposited from "bad" solvent. A physical model is presented to rationalize the observed striation defects, and then a general solvent selection strategy is proposed to prevent both surface striation defects and the dissolving of the underlying layers by carefully choosing the "good" solvent for QDs. A compact QDs film can be fabricated without altering the original morphology of underlying functional layers in a QLED device, leading to significant device performance improvement. An external quantum efficiency of 15.45% is achieved in a green QLED with uniform emitting region. This solvent selection strategy provides a general way to deposit high quality films for most of the solution-processed multilayer optoelectronic devices.
引用
收藏
页数:8
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