Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

被引:51
作者
Krishnamurthi, Vaishnavi [1 ]
Khan, Hareem [1 ]
Ahmed, Taimur [1 ,2 ,3 ]
Zavabeti, Ali [1 ,4 ]
Tawfik, Sherif Abdulkader [5 ]
Jain, Shubhendra Kumar [1 ,2 ,3 ,5 ,6 ,7 ]
Spencer, Michelle J. S. [8 ]
Balendhran, Sivacarendran [9 ]
Crozier, Kenneth B. [9 ,10 ,11 ]
Li, Ziyuan [12 ]
Fu, Lan [12 ,13 ]
Mohiuddin, Md [1 ]
Low, Mei Xian [1 ,2 ,3 ]
Shabbir, Babar [14 ,15 ]
Boes, Andreas [1 ]
Mitchell, Arnan [1 ]
McConville, Christopher F. [5 ]
Li, Yongxiang [1 ]
Kalantar-Zadeh, Kourosh [16 ]
Mahmood, Nasir [1 ]
Walia, Sumeet [1 ,2 ,3 ]
机构
[1] RMIT Univ, Sch Engn, 124 La Trobe St, Melbourne, Vic 3001, Australia
[2] RMIT Univ, Funct Mat & Microsyst Res Grp, 124 La Trobe St, Melbourne, Vic 3001, Australia
[3] RMIT Univ, Micro Nano Res Facil, 124 La Trobe St, Melbourne, Vic 3001, Australia
[4] Univ Melbourne, Dept Chem Engn, Melbourne, Vic 3010, Australia
[5] RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia
[6] CSIR Natl Phys Lab CSIR NPL, Sensor Devices & Metrol Grp, Dr KS Krishnan Rd, New Delhi 110012, India
[7] Acad Sci & Innovat Res AcSIR, CSIR HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
[8] RMIT Univ, Sch Sci, ARC Ctr Excellence Future LowEnergy Elect Technol, GPO Box 2476, Melbourne, Vic 3001, Australia
[9] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia
[10] Univ Melbourne, Dept Elect & Elect Engn, Melbourne, Vic 3010, Australia
[11] Univ Melbourne, Australian Res Council ARC, Ctr Excellence Transformat Meta Opt Syst, Melbourne, Vic 3010, Australia
[12] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys, Canberra, ACT 2601, Australia
[13] Australian Natl Univ, Australian Res Council ARC, Ctr Excellence Transformat Meta Opt Syst, Canberra, ACT 2601, Australia
[14] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia
[15] Monash Univ, ARC Ctr Excellence Future Low Energy Elect Techno, Clayton, Vic 3800, Australia
[16] Univ New South Wales UNSW, Sch Chem Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
atomically thin materials; broadband photodetectors; liquid metals; monochalcogenides; SnS; CHEMICAL-VAPOR-DEPOSITION; BLACK-PHOSPHORUS; OPTICAL-PROPERTIES; SPECTRAL RESPONSE; SULFIDE; PHOTOTRANSISTORS; RECOMBINATION; ULTRAVIOLET; EFFICIENCY; NANOSHEETS;
D O I
10.1002/adma.202004247
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (approximate to 1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W-1) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.
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页数:10
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