Structure of surface electronic states in strained mercury telluride

被引:7
作者
Kibis, O., V [1 ,2 ]
Kyriienko, O. [3 ,4 ,5 ]
Shelykh, I. A. [2 ,5 ]
机构
[1] Novosibirsk State Tech Univ, Dept Appl & Theoret Phys, Karl Marx Ave 20, Novosibirsk 630073, Russia
[2] Univ Iceland, Sci Inst, IS-107 Reykjavik, Iceland
[3] KTH Royal Inst Technol, NORDITA, Roslagstullsbacken 23, SE-10691 Stockholm, Sweden
[4] Stockholm Univ, Roslagstullsbacken 23, SE-10691 Stockholm, Sweden
[5] ITMO Univ, St Petersburg 197101, Russia
来源
NEW JOURNAL OF PHYSICS | 2019年 / 21卷 / 04期
基金
俄罗斯基础研究基金会;
关键词
topological insulator; surface states; strained HgTe; SINGLE DIRAC CONE; TOPOLOGICAL INSULATORS;
D O I
10.1088/1367-2630/ab1406
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present the theory describing the various surface electronic states arisen from the mixing of conduction and valence bands in a strained mercury telluride (HgTe) bulk material. We demonstrate that the strain-induced band gap in the Brillouin zone center of HgTe results in the surface states of two different kinds. Surface states of the first kind exist in the small region of electron wave vectors near the center of the Brillouin zone and have the Dirac linear electron dispersion characteristic for topological states. The surface states of the second kind exist only far from the center of the Brillouin zone and have the parabolic dispersion for large wave vectors. The structure of these surface electronic states is studied both analytically and numerically in the broad range of their parameters, aiming to develop its systematic understanding for the relevant model Hamiltonian. The results bring attention to the rich surface physics relevant for topological systems.
引用
收藏
页数:8
相关论文
共 36 条
  • [1] Adachi S, 2004, Handbook on Physical Properties of Semiconductors: Volume 3: II-VI Compound Semiconductors, V3
  • [2] Realization of Hofstadter's butterfly and a one-way edge mode in a polaritonic system
    Banerjee, R.
    Liew, T. C. H.
    Kyriienko, O.
    [J]. PHYSICAL REVIEW B, 2018, 98 (07)
  • [3] Bir G. L., 1974, Symmetry and StrainInduced Effects in Semiconductors
  • [4] Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
    Bruene, C.
    Liu, C. X.
    Novik, E. G.
    Hankiewicz, E. M.
    Buhmann, H.
    Chen, Y. L.
    Qi, X. L.
    Shen, Z. X.
    Zhang, S. C.
    Molenkamp, L. W.
    [J]. PHYSICAL REVIEW LETTERS, 2011, 106 (12)
  • [5] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
    Chen, Y. L.
    Analytis, J. G.
    Chu, J. -H.
    Liu, Z. K.
    Mo, S. -K.
    Qi, X. L.
    Zhang, H. J.
    Lu, D. H.
    Dai, X.
    Fang, Z.
    Zhang, S. C.
    Fisher, I. R.
    Hussain, Z.
    Shen, Z. -X.
    [J]. SCIENCE, 2009, 325 (5937) : 178 - 181
  • [6] Studies on the electronic structures of three-dimensional topological insulators by angle resolved photoemission spectroscopy
    Chen, Yulin
    [J]. FRONTIERS OF PHYSICS, 2012, 7 (02) : 175 - 192
  • [7] Helical edge and surface states in HgTe quantum wells and bulk insulators
    Dai, Xi
    Hughes, Taylor L.
    Qi, Xiao-Liang
    Fang, Zhong
    Zhang, Shou-Cheng
    [J]. PHYSICAL REVIEW B, 2008, 77 (12):
  • [8] Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film
    Dantscher, K. -M.
    Kozlov, D. A.
    Olbrich, P.
    Zoth, C.
    Faltermeier, P.
    Lindner, M.
    Budkin, G. V.
    Tarasenko, S. A.
    Bel'kov, V. V.
    Kvon, Z. D.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Weiss, D.
    Jenichen, B.
    Ganichev, S. D.
    [J]. PHYSICAL REVIEW B, 2015, 92 (16)
  • [9] DYAKONOV MI, 1981, JETP LETT+, V33, P110
  • [10] Topological insulators in three dimensions
    Fu, Liang
    Kane, C. L.
    Mele, E. J.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (10)