Transition Metal-Doped Magnetic Oxides

被引：9
作者：
Song, Cheng [1 ]
Pan, Feng [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
来源：
OXIDE SEMICONDUCTORS | 2013年 / 88卷
关键词：
ROOM-TEMPERATURE FERROMAGNETISM; THIN-FILMS; CO; MN; SPINTRONICS; ORIGIN; SEMICONDUCTORS; INJECTION; DEFECTS; DENSITY;
D O I：
10.1016/B978-0-12-396489-2.00007-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：227 / 259
页数：33
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