Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000(1)over-bar) GaN

被引：7

作者：

Keller, S. ^{[1
]}

Pfaff, N.

DenBaars, S. P.

Mishra, U. K.

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 18期

关键词：

WIRES;

D O I：

10.1063/1.4764070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pronounced polarized light emission was observed from N-polar AlGaN/GaN multi quantum wells grown on (000 (1) over bar) GaN with a misorientation of 4 degrees toward the m-direction grown by metal organic chemical vapor deposition. The misoriented (Al,Ga,In)N layers exhibited a high density of surface steps parallel to the < 11 (2) over bar0 > direction with step heights between 1 and 2 nm. The corrugated surfaces led to the formation of self organized quantum wire arrays in samples with 2.5 and 3.5 nm thick wells, revealed by a degree of polarization of 0.19 and 0.14, respectively, for light emission at 10K. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764070]

引用

页数：3