An enhanced fast slew rate recycling folded cascode Op-Amp with general improvement in 180 nm CMOS process

被引:20
作者
Feizbakhsh, Seyed Vahid [1 ]
Yosefi, Ghader [1 ]
机构
[1] Islamic Azad Univ, Mahabad Branch, Elect Elect Engn Dept, Mahabad 5913933137, Iran
关键词
Amplifiers; CMOS recycling folded cascode Op-Amp; Slew rate; Gain boosting; Bandwidth; LOW-VOLTAGE; DC GAIN; TRANSCONDUCTANCE; OTA; PERFORMANCE; AMPLIFIER; DESIGN;
D O I
10.1016/j.aeue.2019.01.021
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new technique to improve CMOS recycling folded cascode (RFC) operational amplifier (Op-Amp). Our modification is based on shorting two nodes in the conventional RFC circuit. It causes that the seen resistance from the created new node be half of the conventional RFC counterpart and makes it to double the slew rate. Compared to it, our circuit is also capable to enhance DC gain and unity gain bandwidth (UGBW) with increasing output resistance of differential pair. Moreover, our proposed improvements are in better fast-settling time, input referred noise, input offset voltage, total harmonic distortion (THD), common mode rejection ratio (CMRR) and power supply rejection ratio (PSRR) in the same power consumption. Simulation results in 180 nm CMOS process indicates that the proposed amplifier has 1.5 times the unity gain bandwidth (185 MHz versus 125 MHz) and also has 7 times gain boosting (75 dB versus 58 dB) with better figure of merit (FOM) in the same power consumption, driving capacitor load of 10 pF @1.2 V power supply. The results also demonstrate that the temperature sensitivity, power supply variations and process corners have a negligible effect on the proposed amplifier stability. (C) 2019 Elsevier GmbH. All rights reserved.
引用
收藏
页码:200 / 217
页数:18
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