Electronic Defects in Amorphous Oxide Semiconductors: A Review

被引：242
作者：
Ide, Keisuke [1 ]
Nomura, Kenji [1 ,3 ]
Hosono, Hideo [1 ,2 ]
Kamiya, Toshio [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Lab Mat & Struct, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 05期
基金：
日本学术振兴会;
关键词：
amorphous oxide semiconductors; defects; excess oxygen; hydrogen; instability; oxygen vacancy; thin-film transistors; weakly bonded oxygen; GA-ZN-O; THIN-FILM-TRANSISTOR; OPTICAL-PROPERTIES; TRANSPARENT; HYDROGEN; DEVICE; DIFFUSION; TRANSPORT; OXYGEN; INDIUM;
D O I：
10.1002/pssa.201800372
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin-film transistor (TFT) backplanes in flat-panel displays. This review first provides a brief history and current status of AOS technology, and then introduces electronic defects in AOSs reported to date that are critically important for understanding and controlling the instability of TFTs that is the most serious issue in the development of the AOS technology. In particular, it is important to know that many AOS defects are related to oxygen and hydrogen impurities, though oxygen is the major constituent of AOS and hydrogen is not intentionally incorporated. Instability issues and their underlying mechanisms are also discussed in relation to these defects.
引用
收藏
页数：28
相关论文
共 140 条
[1]   Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors [J].
Abe, Katsumi ;
Sato, Ayumu ;
Takahashi, Kenji ;
Kumomi, Hideya ;
Kamiya, Toshio ;
Hosono, Hideo .
THIN SOLID FILMS, 2014, 559 :40-43
[2]  
[Anonymous], 2010, Transparent Electronics: From Synthesis to Applications
[3]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[4]   Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications [J].
Bang, Joonho ;
Matsuishi, Satoru ;
Hosono, Hideo .
APPLIED PHYSICS LETTERS, 2017, 110 (23)
[5]   ZNO FIELD-EFFECT TRANSISTOR [J].
BOESEN, GF ;
JACOBS, JE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11) :2094-&
[6]   Excimer laser crystallization of InGaZnO4 on SiO2 substrate [J].
Chen, Tao ;
Wu, Meng-Yue ;
Ishihara, Ryoichi ;
Nomura, Kenji ;
Kamiya, Toshio ;
Hosono, Hideo ;
Beenakker, C. I. M. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (11) :1694-1696
[7]   Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor [J].
Chen, Te-Chih ;
Chang, Ting-Chang ;
Hsieh, Tien-Yu ;
Lu, Wei-Siang ;
Jian, Fu-Yen ;
Tsai, Chih-Tsung ;
Huang, Sheng-Yao ;
Lin, Chia-Sheng .
APPLIED PHYSICS LETTERS, 2011, 99 (02)
[8]   Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses [J].
Cho, In-Tak ;
Lee, Jeong-Min ;
Lee, Jong-Ho ;
Kwon, Hyuck-In .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (01)
[9]   Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors [J].
Cho, Young-Je ;
Shin, Ji-Hoon ;
Bobade, S. M. ;
Kim, Young-Bae ;
Choi, Duck-Kyun .
THIN SOLID FILMS, 2009, 517 (14) :4115-4118
[10]   Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors [J].
Chowdhury, Md Delwar Hossain ;
Migliorato, Piero ;
Jang, Jin .
APPLIED PHYSICS LETTERS, 2011, 98 (15)
12345678910