GaAsAlAs lateral superlattices on vicinal surfaces

被引：0

作者：

Laruelle, F ^{[1
]}

Lelarge, F ^{[1
]}

Mélin, T ^{[1
]}

Petit, F ^{[1
]}

Cavanna, A ^{[1
]}

Etienne, B ^{[1
]}

机构：

[1] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France

来源：

JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P2期

关键词：

D O I：

10.1051/jp4:1999204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We give a short review of some growth issues on vicinal surfaces and of the electronic properties in GaAs/AlAs Lateral Superlattices (LSL) obtained by molecular beam epitaxy. Original physical effects due to the lower dimensionality are observed In optical and in transport experiments. We get a good understanding of these properties which are associated to the strong in-plane modulation at nanometric lateral scale.

引用

页码：33 / 36

页数：4

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