GaAsAlAs lateral superlattices on vicinal surfaces

被引：0
|
作者：
Laruelle, F [1 ]
Lelarge, F [1 ]
Mélin, T [1 ]
Petit, F [1 ]
Cavanna, A [1 ]
Etienne, B [1 ]
机构：
[1] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France
来源：
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P2期
关键词：
D O I：
10.1051/jp4:1999204
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We give a short review of some growth issues on vicinal surfaces and of the electronic properties in GaAs/AlAs Lateral Superlattices (LSL) obtained by molecular beam epitaxy. Original physical effects due to the lower dimensionality are observed In optical and in transport experiments. We get a good understanding of these properties which are associated to the strong in-plane modulation at nanometric lateral scale.
引用
收藏
页码：33 / 36
页数：4
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