A Study of Solution-Processed Zinc-Tin-Oxide Semiconductors for Thin-Film Transistors

被引：20

作者：

Hsu, Chih-Chieh ^{[1
,2
]}

Chou, Cheng-Han ^{[1
,2
]}

Chen, Yu-Ting ^{[1
,2
]}

Jhang, Wun-Ciang ^{[1
,2
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Touliu 64002, Yunlin, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu 64002, Yunlin, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期

关键词：

Current-voltage characteristic; oxide semiconductor; solution process; thin-film transistor (TFT); ELECTRICAL-PROPERTIES; SOLAR-CELLS; METAL-OXIDE; MOBILITY; MEMORY; PHOTOANODES; LAYER;

D O I：

10.1109/TED.2019.2910347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) fabricated using solution-processed zinc-tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 degrees C-700 degrees C. The ZTO semiconductor with the annealing process at 600 degrees C in air can give an optimal ZTO TFT having a low leakage current of 10(-12) A and a high I-ON/I-OFF ratio of 3 x 10(7). The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of 1.2 x 10(12) cm(-2)eV(-1).

引用

页码：2631 / 2636

页数：6

共 50 条

[31] Effect of Strontium Addition on Stability of Zinc-Tin-Oxide Thin-Film Transistors Fabricated by Solution Process
Kim, Youn Goo
Avis, Christophe
Hwang, Hye Rim
Kim, Tae Woong
Seol, Young Gog
Jang, Jin
JOURNAL OF DISPLAY TECHNOLOGY, 2014, 10 (11): : 939 - 944
[32] Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications
Zhang, Feng
Liu, Guoxia
Liu, Ao
Shin, Byoungchul
Shan, Fukai
CERAMICS INTERNATIONAL, 2015, 41 (10) : 13218 - 13223
[33] Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
Xu, Xiaoli
Feng, Linrun
He, Shasha
Jin, Yizheng
Guo, Xiaojun
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (10) : 1420 - 1422
[34] Solution-processed nickel tetrabenzoporphyrin thin-film transistors
Shea, Patrick B.
Kanicki, Jerzy
Pattison, Lisa R.
Petroff, Pierre
Kawano, Manami
Yamada, Hiroko
Ono, Noboru
JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
[35] Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and Inverters
Fan, Caixuan
Liu, Ao
Meng, You
Guo, Zidong
Liu, Guoxia
Shan, Fukai
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (10) : 4137 - 4143
[36] Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors
Lee, Dong Hee
Park, Sung Min
Yang, Jung Il
Cho, Dong Kyu
Woo, Sang Hyun
Lim, Yoo Sung
Kim, Dae Kuk
Yi, Moonsuk
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)
[37] Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors
Lee, Stephanie S.
Kim, Chang Su
Gomez, Enrique D.
Purushothaman, Balaji
Toney, Michael F.
Wang, Cheng
Hexemer, Alexander
Anthony, John. E.
Loo, Yueh-Lin
ADVANCED MATERIALS, 2009, 21 (35) : 3605 - +
[38] Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
Lee, Hyeonju
Kwon, Jin-Hyuk
Bae, Jin-Hyuk
Park, Jaehoon
Seo, Cheonghoon
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (04) : 2371 - 2374
[39] Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors
Jung, Tae Soo
Kim, Si Joon
Kim, Chul Ho
Jung, Joohye
Na, Jaewon
Sabri, Mardhiah Muhamad
Kim, Hyun Jae
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (09) : 2888 - 2893
[40] Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films
Sanctis, Shawn
Koslowski, Nico
Hoffmann, Rudolf
Guhl, Conrad
Erdem, Emre
Weber, Stefan
Schneider, Joerg J.
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (25) : 21328 - 21337

← 1 2 3 4 5 →