A Study of Solution-Processed Zinc-Tin-Oxide Semiconductors for Thin-Film Transistors

被引：20

作者：

Hsu, Chih-Chieh ^{[1
,2
]}

Chou, Cheng-Han ^{[1
,2
]}

Chen, Yu-Ting ^{[1
,2
]}

Jhang, Wun-Ciang ^{[1
,2
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Touliu 64002, Yunlin, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu 64002, Yunlin, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期

关键词：

Current-voltage characteristic; oxide semiconductor; solution process; thin-film transistor (TFT); ELECTRICAL-PROPERTIES; SOLAR-CELLS; METAL-OXIDE; MOBILITY; MEMORY; PHOTOANODES; LAYER;

D O I：

10.1109/TED.2019.2910347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) fabricated using solution-processed zinc-tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 degrees C-700 degrees C. The ZTO semiconductor with the annealing process at 600 degrees C in air can give an optimal ZTO TFT having a low leakage current of 10(-12) A and a high I-ON/I-OFF ratio of 3 x 10(7). The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of 1.2 x 10(12) cm(-2)eV(-1).

引用

页码：2631 / 2636

页数：6

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