A Study of Solution-Processed Zinc-Tin-Oxide Semiconductors for Thin-Film Transistors

被引：20
作者：
Hsu, Chih-Chieh [1 ,2 ]
Chou, Cheng-Han [1 ,2 ]
Chen, Yu-Ting [1 ,2 ]
Jhang, Wun-Ciang [1 ,2 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Touliu 64002, Yunlin, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu 64002, Yunlin, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期
关键词：
Current-voltage characteristic; oxide semiconductor; solution process; thin-film transistor (TFT); ELECTRICAL-PROPERTIES; SOLAR-CELLS; METAL-OXIDE; MOBILITY; MEMORY; PHOTOANODES; LAYER;
D O I：
10.1109/TED.2019.2910347
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin-film transistors (TFTs) fabricated using solution-processed zinc-tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 degrees C-700 degrees C. The ZTO semiconductor with the annealing process at 600 degrees C in air can give an optimal ZTO TFT having a low leakage current of 10(-12) A and a high I-ON/I-OFF ratio of 3 x 10(7). The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of 1.2 x 10(12) cm(-2)eV(-1).
引用
收藏
页码：2631 / 2636
页数：6
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