Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family

被引:213
|
作者
Zhou, Xing [1 ]
Zhang, Qi [1 ]
Gan, Lin [1 ]
Li, Huiqiao [1 ]
Xiong, Jie [2 ]
Zhai, Tianyou [1 ]
机构
[1] HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; TRANSITION-METAL DICHALCOGENIDES; LOW-TEMPERATURE SYNTHESIS; FIELD-EFFECT TRANSISTORS; QUALITY MONOLAYER WS2; LARGE-AREA SYNTHESIS; MOS2 ATOMIC LAYERS; DER-WAALS EPITAXY; P-N-JUNCTIONS; HIGH-PERFORMANCE;
D O I
10.1002/advs.201600177
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.
引用
收藏
页数:20
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