Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor

被引：4
作者：
Demarina, NV [1 ]
Obolensky, SV [1 ]
机构：
[1] Nyzhny Novgorod State Univ, Radiophys Fac, Dept Elect, Nizhnii Novgorod 603600, Russia
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 08期
关键词：
D O I：
10.1016/S0026-2714(99)00035-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mechanism of radiation effects in semiconductor (GaAs) is described. Analytic and numerical (equivalent circuit and quasi-hydrodynamic methods) models of ionizing irradiation influence on semiconductor devices are discussed. The GaAs microwave MESFET was selected as the investigation object. The combination of the quasi-hydrodynamic and equivalent circuits methods should provide a possibility to take into account all essential effects and at the same time to save the computation time in comparison with Monte Carlo method. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
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页码：1247 / 1263
页数：17
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