Electric field tunable electronic properties of P-ZnO and SiC-ZnO van der Waals heterostructures

被引:31
作者
Din, H. U. [1 ]
Idrees, M. [1 ]
Alrebdi, Tahani A. [2 ]
Nguyen, Chuong, V [3 ]
Amin, B. [1 ]
机构
[1] Hazara Univ, Dept Phys, Mansehra 21300, Pakistan
[2] Princess Nourah Bint Abdulrahman Univ, Dept Phys, Riyadh, Saudi Arabia
[3] Le Quy Don Tech Univ, Dept Mat Sci & Engn, Hanoi 100000, Vietnam
关键词
2D-materials; vdW heterostructure; Electric-field; Type-II; DFT; MOS2; NANOSHEETS;
D O I
10.1016/j.commatsci.2019.04.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vertical stacking and influence of external electric field are good techniques to tune the electronic properties of two-dimensional materials for potential nanoelectronics and optoelectronic devices. The structural and electronic properties of P-ZnO and SiC-ZnO van der Waals (vdW) heterostructures are investigated by first principles calculations. P-ZnO (SiC-ZnO) heterostructure exhibits an indirect type-I (direct type-II) semiconducting band character. The effect of perpendicular applied external electric field on the electronic properties of the most stable vdW heterostructure has also been systematically discussed. Remarkable variations in the band gap nature are induced by increasing field strength from 0.1 to 1.0 V/A (for P-ZnO) and 0.1 to 0.8 V/A (for SiC-ZnO). The intrinsic indirect type-I is modulated to type-II semiconducting band gap in P-ZnO by applying electric field strength 0.1 V/A. More interestingly, reduction in the size with transition from an indirect-to-direct type-II semiconductor band gap nature is noted at 0.5 V/A. However, a direct type-II semiconductor to metallic character is found at 1.0 V/A (for P-ZnO) and 0.8 V/A (for SiC-ZnO). Our results suggests that these vdW heterostructures are promising candidates for electronic and optoelectronic device applications.
引用
收藏
页码:166 / 170
页数:5
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