Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

被引：2

作者：

Yamada, Michihiro ^{[1
]}

Fujita, Yuichi ^{[1
]}

Yamada, Shinya ^{[1
,2
]}

Sawano, Kentarou ^{[3
]}

Hamaya, Kohei ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[3] Tokyo City Univ, Adv Res Labs, 8-15-1 Todoroki, Tokyo 1580082, Japan

来源：

MATERIALS | 2018年 / 11卷 / 01期

基金：

日本学术振兴会;

关键词：

semiconductor spintronics; germanium; spin absorption; ELECTRICAL DETECTION; INJECTION; MAGNETIZATION; TRANSPORT;

D O I：

10.3390/ma11010150

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.

引用

页数：8

共 49 条

[1] Electric-field control of spin accumulation signals in silicon at room temperature [J].

Ando, Y. ;

Maeda, Y. ;

Kasahara, K. ;

Yamada, S. ;

Masaki, K. ;

Hoshi, Y. ;

Sawano, K. ;

Izunome, K. ;

Sakai, A. ;

Miyao, M. ;

Hamaya, K. .

APPLIED PHYSICS LETTERS, 2011, 99 (13)

[2] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier [J].

Ando, Y. ;

Hamaya, K. ;

Kasahara, K. ;

Kishi, Y. ;

Ueda, K. ;

Sawano, K. ;

Sadoh, T. ;

Miyao, M. .

APPLIED PHYSICS LETTERS, 2009, 94 (18)

[3] Electronic measurement and control of spin transport in silicon [J].

Appelbaum, Ian ;

Huang, Biqin ;

Monsma, Douwe J. .

NATURE, 2007, 447 (7142) :295-298

[4] All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration [J].

Bruski, P. ;

Manzke, Y. ;

Farshchi, R. ;

Brandt, O. ;

Herfort, J. ;

Ramsteiner, M. .

APPLIED PHYSICS LETTERS, 2013, 103 (05)

[5] Electrical creation of spin polarization in silicon at room temperature [J].

Dash, Saroj P. ;

Sharma, Sandeep ;

Patel, Ram S. ;

de Jong, Michel P. ;

Jansen, Ron .

NATURE, 2009, 462 (7272) :491-494

[6] Progress towards Spin-Based Light Emission in Group IV Semiconductors [J].

De Cesari, Sebastiano ;

Vitiello, Elisa ;

Giorgioni, Anna ;

Pezzoli, Fabio .

ELECTRONICS, 2017, 6 (01)

[7] Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers [J].

Dushenko, S. ;

Koike, M. ;

Ando, Y. ;

Shinjo, T. ;

Myronov, M. ;

Shiraishi, M. .

PHYSICAL REVIEW LETTERS, 2015, 114 (19)

[8] Semiconductors between spin-polarized sources and drains [J].

Fert, A. ;

George, J.-M. ;

Jaffres, H. ;

Mattana, R. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) :921-932

[9] Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].

Fert, A ;

Jaffrès, H .

PHYSICAL REVIEW B, 2001, 64 (18)

[10] Spin Transport and Relaxation up to 250 K in Heavily Doped n-Type Ge Detected Using Co2FeAl0.5Si0.5 Electrodes [J].

Fujita, Y. ;

Yamada, M. ;

Tsukahara, M. ;

Oka, T. ;

Yamada, S. ;

Kanashima, T. ;

Sawano, K. ;

Hamaya, K. .

PHYSICAL REVIEW APPLIED, 2017, 8 (01)

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