Resistor film by thermal decomposition technique and thermal decomposition characteristics of its source materials

被引:1
作者
Kuramasu, K
Saito, S
Okano, K
Takahashi, Y
机构
[1] MATSUSHITA ELECT IND CO LTD, DEVICE ENGN DEV CTR, KADOMA, OSAKA 571, JAPAN
[2] GIFU UNIV, FAC ENGN, GIFU 50111, JAPAN
关键词
ruthenium oxide thin film; metallo-organic deposition; thermal decomposition; volatilization; screen printing paste; source material; sputtering; thin film resistor;
D O I
10.2109/jcersj.104.844
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to develop an economical production process of stable and uniform thin film resistors, the RuO2-based thin films prepared by MOD were studied with focussing on the three major factors to affect the properties of the RuO2 resistors: the kinds of the substrate, suitable resin component for screen printing and effect of the cleanness of the substrate. As a result, it was found that (1) the films formed on amorphous glazed alumina plate were much more thermally stable than those on crystalline glazed plate, (2) rosin type paste with higher temperature thermal decomposition property gave better resistance uniformity than cellulose type paste, and (3) cleaning the substrate surface with fumed nitric acid was indispensable for making realization of the uniformity and reproducibility in the resistance of RuO2 dot array. Studies on the properties of sputtered RuO2 films were also made far comparison with the properties of MOD RuO2 films.
引用
收藏
页码:844 / 849
页数:6
相关论文
共 4 条
[1]   HIGH-TEMPERATURE CHEMISTRY OF RUTHENIUM-OXYGEN SYSTEM [J].
BELL, WE ;
TAGAMI, M .
JOURNAL OF PHYSICAL CHEMISTRY, 1963, 67 (11) :2432-&
[2]   CONDUCTING TRANSITION-METAL OXIDES - POSSIBILITIES FOR RUO2 IN VLSI METALLIZATION [J].
KRUSINELBAUM, L ;
WITTMER, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (10) :2610-2614
[3]  
KURAMASU K, 1992, INT MICR S IMC 1992, P547
[4]  
SAITO S, 1992, NIPPON SERAM KYO GAK, V100, P663, DOI 10.2109/jcersj.100.663