Characterization of a two-dimensional cantilever array with through-wafer electrical interconnects

The characterization of two-dimensional micromachined silicon cantilever arrays with integrated through-wafer electrical interconnects is presented. The approach addresses alignment and density issues associated with operating two-dimensional scanning probe arrays. The tungsten based interconnect (30 mum diameter, 1 Omega resistance) is shown not to degrade the sensitivity of the piezoresistive deflection sensor embedded on each cantilever. Operation of the array (up to 2x7) as a microscope for imaging large areas (3.8x0.45 mm(2)) and with vertical row stitching is demonstrated with images of samples orders of magnitude larger than images possible with standard atomic force microscope techniques. (C) 2002 American Institute of Physics.