High reliability of nanometer-range N2O-nitrided oxides due to suppressing hole injection

被引：8

作者：

Kobayashi, K

Teramoto, A

Nakamura, T

Watanabe, H

Kurokawa, H

Matsui, Y

Hirayama, M

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hole transport and trapping in N2O-nitrided oxides have been studied. It is shown that N2O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.

引用

页码：335 / 338

页数：4