SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI

被引：78

作者：

Franco, Jacopo ^{[1
,2
]}

Kaczer, Ben ^{[1
]}

Roussel, Philippe J. ^{[1
]}

Mitard, Jerome ^{[1
]}

Cho, Moonju ^{[1
]}

Witters, Liesbeth ^{[1
]}

Grasser, Tibor ^{[3
]}

Groeseneken, Guido ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3000 Louvain, Belgium

[3] Vienna Univ Technol, A-1040 Vienna, Austria

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 01期

关键词：

Ge; negative bias temperature instability (NBTI); pMOSFET; reliability; SiGe; DEGRADATION; MECHANISMS; GROWTH; GE;

D O I：

10.1109/TED.2012.2225625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-thickness devices. A physical model is proposed to explain the intrinsically superior NBTI robustness.

引用

页码：396 / 404

页数：9

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