Current-voltage characteristics of Schottky diode simulated using semiconductor device equations

被引：28

作者：

Kaushal, Priyanka ^{[1
]}

Chand, Subhash ^{[1
]}

Osvald, Jozef ^{[2
]}

机构：

[1] Natl Inst Technol, Dept Phys, Hamirpur 177005, HP, India

[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2013年 / 100卷 / 05期

关键词：

currentvoltage characteristics; Schottky diode; numerical simulation; semiconductor devices; thermionic emission diffusion; TEMPERATURE-DEPENDENCE; BARRIER HEIGHT; BEHAVIOR; SILICON;

D O I：

10.1080/00207217.2012.720946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Poisson's equation and the drift diffusion equations have been used to simulate the currentvoltage characteristics of Schottky diode. The potential variation inside the bulk semiconductor near the metalsemiconductor contact was estimated first and then the current as a function of bias through the Schottky diode using silicon parameters were calculated over a wide temperature range. From the simulated currentvoltage characteristics the diode parameters were extracted by fitting of currentvoltage data into thermionic emission diffusion current equation. The derived barrier parameters are analysed to study the effect of various parameters, e.g. semiconductor thickness, doping concentration, temperature dependence of carrier mobility and energy band gap, on the currentvoltage characteristics of Schottky diode in view of the thermionic emission diffusion current equations.

引用

页码：686 / 698

页数：13

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