Preliminary studies of properties of oxide thin/thick films for gamma radiation dosimetry

被引：37

作者：

Arshak, K ^{[1
]}

Korostynska, O ^{[1
]}

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 02期

关键词：

thin and thick films; metal oxides; gamma radiation; electrical and optical properties;

D O I：

10.1016/j.mseb.2003.11.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Throughout this work tellurium dioxide (TeO2), indium, oxide (In2O3), silicon monoxide (SiO), nickel oxide (NiO) and LaFeO3 perovskite and their mixtures in different proportions in the forms of thin and thick films were used as materials for the radiation sensing layers. Detection of radiation was performed based on the fact that both electrical and optical properties of the materials undergo changes upon the exposure to gamma radiation. It was found that the optical band gap values decreased with the increase in radiation dose. Influence of radiation resulted in significant alterations of current-voltage characteristics in both thin and thick film devices. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：224 / 232

页数：9

共 28 条

[1]

Arshak K., 2002, Proceedings of IEEE Sensors 2002. First IEEE International Conference on Sensors (Cat. No.02CH37394), P547, DOI 10.1109/ICSENS.2002.1037155

[2]

Arshak K, 2002, INT CONF MICROELECTR, P357, DOI 10.1109/MIEL.2002.1003210

[3]

ARSHAK K, 2004, ANN PHYS

[4]

ARSHAK K, 2004, MICROELECTRONICS INT, V1

[5] Influence of γ radiation on thin Ta2O5-Si structures [J].

Atanassova, E ;

Paskaleva, A ;

Konakova, R ;

Spassov, D ;

Mitin, VF .

MICROELECTRONICS JOURNAL, 2001, 32 (07) :553-562

[6] A low-cost oxygen sensor fabricated as a screen-printed semiconductor device suitable for unheated operation at ambient temperatures [J].

Atkinson, J ;

Cranny, A ;

de Cloke, CS .

SENSORS AND ACTUATORS B-CHEMICAL, 1998, 47 (1-3) :171-180

[7]

AUDET S, 1994, RAD SENSORS SEMICOND, P271

[8] Influence of damage caused by Kr ions and neutrons on electrical properties of silicon detectors [J].

Croitoru, N ;

Gubbini, E ;

Rancoita, PG ;

Rattaggi, M ;

Seidman, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 426 (2-3) :477-485

[9] Radiation-induced color centers in La-doped PbWO4 crystals [J].

Deng, Q ;

Yin, ZW ;

Zhu, RY .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 438 (2-3) :415-420

[10] A NEW APPROACH TO ADSORPTION MICROCALORIMETRY BASED ON A LITAO3 PYROELECTRIC TEMPERATURE SENSOR AND A PULSED MOLECULAR-BEAM [J].

DVORAK, L ;

KOVAR, M ;

CERNY, S .

THERMOCHIMICA ACTA, 1994, 245 :163-171

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