Evaluation of Quantum Confinement Effect in Nanocrystal Si Dot Layer by Raman Spectroscopy

被引：1

作者：

Mizukami, Y. ^{[1
]}

Kosemura, D. ^{[1
]}

Numasawa, Y. ^{[1
]}

Ohshita, Y. ^{[2
]}

Ogura, A. ^{[1
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa, Japan

[2] Toyota Technol Inst, Tenpaku Ku, Nagoya, Aichi 468, Japan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 11期

关键词：

Nanocrystal; UV Raman; Size Distribution; Stress; SILICON;

D O I：

10.1166/jnn.2012.6810

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Quantum confinement effect in the nanocrystal-Si (nc-Si) was evaluated by Raman spectroscopy. The nc-Si dot layers were fabricated by the H-2 plasma treatment for the nucleation site formation followed by the SiH4 irradiation for the nc-Si growth. Post-oxidation annealing was also performed to improve the crystalline quality. After post-oxidation annealing for 5 or 10 min, the asymmetric broadening on the lower frequency sides in Raman spectra were obtained, which can be attributed to the phonon confinement effect in nc-Si. Furthermore we confirmed that hydrostatic stress of approximately 500 MPa was induced in nc-Si after post-oxidation annealing.

引用

页码：8700 / 8703

页数：4

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