Evaluation of Quantum Confinement Effect in Nanocrystal Si Dot Layer by Raman Spectroscopy

被引：1
|
作者：
Mizukami, Y. [1 ]
Kosemura, D. [1 ]
Numasawa, Y. [1 ]
Ohshita, Y. [2 ]
Ogura, A. [1 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Tama Ku, Kawasaki, Kanagawa, Japan
[2] Toyota Technol Inst, Tenpaku Ku, Nagoya, Aichi 468, Japan
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 11期
关键词：
Nanocrystal; UV Raman; Size Distribution; Stress; SILICON;
D O I：
10.1166/jnn.2012.6810
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Quantum confinement effect in the nanocrystal-Si (nc-Si) was evaluated by Raman spectroscopy. The nc-Si dot layers were fabricated by the H-2 plasma treatment for the nucleation site formation followed by the SiH4 irradiation for the nc-Si growth. Post-oxidation annealing was also performed to improve the crystalline quality. After post-oxidation annealing for 5 or 10 min, the asymmetric broadening on the lower frequency sides in Raman spectra were obtained, which can be attributed to the phonon confinement effect in nc-Si. Furthermore we confirmed that hydrostatic stress of approximately 500 MPa was induced in nc-Si after post-oxidation annealing.
引用
收藏
页码：8700 / 8703
页数：4
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