PHASE TRANSITION IN SPUTTERED HfO2 THIN FILMS: A QUALITATIVE RAMAN STUDY

被引：0
作者：
Belo, G. S. [1 ]
Nakagomi, F. [2 ]
Minko, A. [1 ]
da Silva, S. W. [2 ]
Morais, P. C. [2 ]
Buchanan, D. A. [1 ]
机构：
[1] Univ Manitoba, Winnipeg, MB R3T 5V6, Canada
[2] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF, Brazil
来源：
2012 25TH IEEE CANADIAN CONFERENCE ON ELECTRICAL & COMPUTER ENGINEERING (CCECE) | 2012年
基金：
加拿大自然科学与工程研究理事会;
关键词：
High-kappa gate dielectrics; Hafnium compounds; Sputtering; Raman scattering; GATE DIELECTRICS; HAFNIUM; SCATTERING; INTEGRATION; DEPOSITION; ZIRCONIUM; GROWTH; OXIDES; CMOS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfOx film using the Hf target exhibits a tetragonal phase, what is likely due to a crystallite size effect. However, as-deposited HfOx film using the HfO2 target is amorphous. As the annealing temperature increases both films begin to become amorphous. At 600 degrees C they start to crystallize into a stable monoclinic phase.
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页数：4
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