PHASE TRANSITION IN SPUTTERED HfO2 THIN FILMS: A QUALITATIVE RAMAN STUDY

被引：0

作者：

Belo, G. S. ^{[1
]}

Nakagomi, F. ^{[2
]}

Minko, A. ^{[1
]}

da Silva, S. W. ^{[2
]}

Morais, P. C. ^{[2
]}

Buchanan, D. A. ^{[1
]}

机构：

[1] Univ Manitoba, Winnipeg, MB R3T 5V6, Canada

[2] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF, Brazil

来源：

2012 25TH IEEE CANADIAN CONFERENCE ON ELECTRICAL & COMPUTER ENGINEERING (CCECE) | 2012年

基金：

加拿大自然科学与工程研究理事会;

关键词：

High-kappa gate dielectrics; Hafnium compounds; Sputtering; Raman scattering; GATE DIELECTRICS; HAFNIUM; SCATTERING; INTEGRATION; DEPOSITION; ZIRCONIUM; GROWTH; OXIDES; CMOS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfOx film using the Hf target exhibits a tetragonal phase, what is likely due to a crystallite size effect. However, as-deposited HfOx film using the HfO2 target is amorphous. As the annealing temperature increases both films begin to become amorphous. At 600 degrees C they start to crystallize into a stable monoclinic phase.

引用

页数：4

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