Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films

被引：0

作者：

Bachhofer, H ^{[1
]}

Reisinger, H

Steinlesberger, G

Schroeder, H

Nagel, N

Mikolajick, T

Cerva, H

Von Philepsborn, H

Waser, R

机构：

[1] Infineon Technol AG, D-81730 Munich, Germany

[2] Univ Regensburg, D-93040 Regensburg, Germany

[3] Forschungszentrum Julich, D-52425 Julich, Germany

[4] Siemens AG, D-81730 Munich, Germany

来源：

INTEGRATED FERROELECTRICS | 2001年 / 39卷 / 1-4期

关键词：

ferroelectrics; SBT; interfacial layer; leakage current;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.

引用

页码：1139 / 1148

页数：10

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