Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films

被引:0
作者
Bachhofer, H [1 ]
Reisinger, H
Steinlesberger, G
Schroeder, H
Nagel, N
Mikolajick, T
Cerva, H
Von Philepsborn, H
Waser, R
机构
[1] Infineon Technol AG, D-81730 Munich, Germany
[2] Univ Regensburg, D-93040 Regensburg, Germany
[3] Forschungszentrum Julich, D-52425 Julich, Germany
[4] Siemens AG, D-81730 Munich, Germany
关键词
ferroelectrics; SBT; interfacial layer; leakage current;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.
引用
收藏
页码:1139 / 1148
页数:10
相关论文
共 21 条
[1]  
BACHHOFER H, 2000, P 12 INT S INT FERR
[2]   Leakage currents in CVD (Ba,Sr)TiO3 thin films [J].
Basceri, C ;
Streiffer, SK ;
Kingon, AI ;
Bilodeau, S ;
Carl, R ;
VanBuskirk, PC ;
Summerfelt, SR ;
McIntyre, P ;
Waser, R .
FERROELECTRIC THIN FILMS V, 1996, 433 :285-290
[3]   ELECTRON TRANSPORT IN SINGLE-DOMAIN FERROELECTRIC BARIUM TITANATE [J].
BERGLUND, CN ;
BAER, WS .
PHYSICAL REVIEW, 1967, 157 (02) :358-&
[4]   LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS [J].
CHEN, X ;
KINGON, AI ;
ALSHAREEF, HN ;
BELLUR, KR ;
GIFFORD, K ;
AUCIELLO, O .
INTEGRATED FERROELECTRICS, 1995, 7 (1-4) :291-306
[5]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[6]   MAGNETORESISTANCE OF SEMICONDUCTING SRTIO3 [J].
FREDERIKSE, HP ;
HOSLER, WR ;
THURBER, WR .
PHYSICAL REVIEW, 1966, 143 (02) :648-+
[7]   Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications [J].
Hintermaier, F ;
Hendrix, B ;
Desrochers, D ;
Roeder, J ;
Baum, T ;
Van Buskirk, P ;
Bolten, D ;
Grossmann, M ;
Lohse, O ;
Schumacher, M ;
Waser, R ;
Cerva, H ;
Dehm, C ;
Fritsch, E ;
Honlein, W ;
Mazure, C ;
Nagel, N ;
Thwaite, P ;
Wendt, H .
INTEGRATED FERROELECTRICS, 1998, 21 (1-4) :367-379
[8]  
HORIKAWA T, 1994, IEICE T ELECTRON, VE77C, P385
[9]   DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].
HWANG, CS ;
PARK, SO ;
CHO, HJ ;
KANG, CS ;
KANG, HK ;
LEE, SI ;
LEE, MY .
APPLIED PHYSICS LETTERS, 1995, 67 (19) :2819-2821
[10]   (BaxSr1-x)Ti1+yO3+z interface contamination and its effect on electrical properties [J].
Im, J ;
Streiffer, SK ;
Auciello, O ;
Krauss, AR .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2593-2595