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A computational investigation on the potential energy surface of thiosulfeno with O(3P) reaction
被引:4
作者:
Bagherzadeh, R.
[1
]
Vessally, Esmail
[2
]
Goodarzi, Moein
[3
]
机构:
[1] Islamic Azad Univ, Dept Engn, Aliabad Katoul Branch, Aliabad Katoul, Golestan, Iran
[2] Payame Noor Univ, Dept Sci, Tehran, Iran
[3] Zanjan Univ, Dept Chem, Zanjan, Iran
关键词:
Computational study;
Mechanism;
PES;
Thiosulfeno radical;
Acid rain;
CORRELATED MOLECULAR CALCULATIONS;
MASS-INDEPENDENT SULFUR;
GAUSSIAN-BASIS SETS;
MICROWAVE-SPECTRUM;
HS2;
GEOMETRY;
ATOMS;
SULFATE;
D O I:
10.1007/s11224-012-0100-5
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The reaction paths of thiosulfeno radical (HS2) with O(P-3) have been investigated at the UB3LYP/aug-cc-pV(T + d)Z and UCCSD(T)/aug-cc-pV(T + d)Z//B3LYP levels. Two stable collision intermediates, HSSO and SS(H)O, have been considered for the HS2 + O(P-3) reaction. Four products of S + HSO, H + SSO, HS + SO, and S-2 + OH are obtained by starting from HSSO and SS(H)O. The calculated results show that the most feasible paths for the formation of S + HSO, H + SSO, and HS + SO products include no transition states in reaction path, while that of S-2 + OH product includes relatively high energy barriers of 23.0 kcal/mol. Therefore, S + HSO, H + SSO, and HS + SO are main products (with the stability other of HS + SO > H + SSO > S + HSO) and S-2 + OH is the second product in HS2 + O(P-3) reaction. Because, all intermediates, transition states, and products involved in the reaction paths lie below the initial reactants, the HS2 + O(P-3) reaction is expected to be rapid even at low temperatures.
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页码:517 / 522
页数:6
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