A computational investigation on the potential energy surface of thiosulfeno with O(3P) reaction

被引:4
作者
Bagherzadeh, R. [1 ]
Vessally, Esmail [2 ]
Goodarzi, Moein [3 ]
机构
[1] Islamic Azad Univ, Dept Engn, Aliabad Katoul Branch, Aliabad Katoul, Golestan, Iran
[2] Payame Noor Univ, Dept Sci, Tehran, Iran
[3] Zanjan Univ, Dept Chem, Zanjan, Iran
关键词
Computational study; Mechanism; PES; Thiosulfeno radical; Acid rain; CORRELATED MOLECULAR CALCULATIONS; MASS-INDEPENDENT SULFUR; GAUSSIAN-BASIS SETS; MICROWAVE-SPECTRUM; HS2; GEOMETRY; ATOMS; SULFATE;
D O I
10.1007/s11224-012-0100-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The reaction paths of thiosulfeno radical (HS2) with O(P-3) have been investigated at the UB3LYP/aug-cc-pV(T + d)Z and UCCSD(T)/aug-cc-pV(T + d)Z//B3LYP levels. Two stable collision intermediates, HSSO and SS(H)O, have been considered for the HS2 + O(P-3) reaction. Four products of S + HSO, H + SSO, HS + SO, and S-2 + OH are obtained by starting from HSSO and SS(H)O. The calculated results show that the most feasible paths for the formation of S + HSO, H + SSO, and HS + SO products include no transition states in reaction path, while that of S-2 + OH product includes relatively high energy barriers of 23.0 kcal/mol. Therefore, S + HSO, H + SSO, and HS + SO are main products (with the stability other of HS + SO > H + SSO > S + HSO) and S-2 + OH is the second product in HS2 + O(P-3) reaction. Because, all intermediates, transition states, and products involved in the reaction paths lie below the initial reactants, the HS2 + O(P-3) reaction is expected to be rapid even at low temperatures.
引用
收藏
页码:517 / 522
页数:6
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