Electropolymerized Poly(para-phenylene)vinylene Films onto and inside Porous Si

被引：0

作者：

Gelloz, B. ^{[1
]}

Mentek, M. ^{[1
]}

Djenizian, T. ^{[2
,3
,4
]}

Dumur, F. ^{[2
,3
,4
]}

Jin, L. ^{[5
]}

Koshida, N. ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, 2-24-16 Nakacho, Koganei, Tokyo 1848588, Japan

[2] Univ Aix Marseille 1, Lab Chim Pr, Ctr Saint Jeromr, UMR 6264, F-1339720 Marseille, France

[3] Univ Aix Marseille II, Lab Chim Pr, Ctr Saint Jeromr, UMR 6264, F-1339720 Marseille, France

[4] Univ Aix Marseille III, Lab Chim Pr, Ctr Saint Jeromr, UMR 6264, F-1339720 Marseille, France

[5] Yamanashi Univ, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan

来源：

NANOSCALE LUMINESCENT MATERIALS | 2010年 / 28卷 / 03期

基金：

日本学术振兴会;

关键词：

PRESSURE WATER-VAPOR; ELECTROCHEMICAL SYNTHESIS; SILICON; LUMINESCENCE; VINYLENE);

D O I：

10.1149/1.3367214

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrochemical deposition of poly(para-phenylene)vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and p-xylylene-alpha,alpha'-bis(triphenylphosphonium chloride as precursor. PPV was successfully deposited onto various Si substrates and PSi layers. It was also deposited inside p(+)-type and p-type PSi. The as-deposited PPV is strongly luminescent. The deposition was confirmed by optical (photoluminescence, reflectivity) and structural analysis (FTIR, SEM). The deposited PPV was smooth without peeling on PSi layers. With strongly luminescent n(+)-type PSi, the rate of the deposition was limited by the large resistivity of PSi. The deposition was found dramatically affected by the PSi nanostructure through the diffusion of precursors in the pores and charge carrier transport in PSi.

引用

页码：91 / 103

页数：13